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dc.contributor.authorSanta Cruz González, C.
dc.contributor.authorSahelices Fernández, Benjamín 
dc.contributor.authorJiménez, J.
dc.contributor.authorGonzález Ossorio, Óscar 
dc.contributor.authorCastán Lanaspa, María Helena 
dc.contributor.authorGonzález, M.B.
dc.contributor.authorVinuesa, G.
dc.contributor.authorDueñas Carazo, Salvador 
dc.contributor.authorCampabadal, F.
dc.contributor.authorGarcía García, Héctor 
dc.date.accessioned2024-02-12T08:47:40Z
dc.date.available2024-02-12T08:47:40Z
dc.date.issued2021
dc.identifier.citation13th Spanish Conference on Electron Devices (CDE), Sevilla, Spain, 2021, p. 74-77es
dc.identifier.isbn978-1-6654-4452-1es
dc.identifier.urihttps://uvadoc.uva.es/handle/10324/66144
dc.descriptionProducción Científicaes
dc.description.abstractA semiempirical memdiode model of resistive switching devices is proposed. This model is a modification of the quasi-static memdiode model (QMM). It is based on the incorporation of time dependencies in the QMM parameters, as well as on the empirically observed asymmetries between the reset and set transition. The model considerably improves the prediction of the response of resistive switching devices to arbitrary input stimulies
dc.format.extent4 p.es
dc.format.mimetypeapplication/pdfes
dc.language.isoenges
dc.publisherInstitute of Electrical and Electronics Engineerses
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses
dc.subject.classificationMemristores
dc.subject.classificationResistive-switching devicees
dc.subject.classificationMemdiodees
dc.subject.classificationSemiempirical modeles
dc.titleSemiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimeses
dc.typeinfo:eu-repo/semantics/conferenceObjectes
dc.identifier.doi10.1109/CDE52135.2021.9455723es
dc.relation.publisherversionhttps://ieeexplore.ieee.org/document/9455723es
dc.title.event13th Spanish Conference on Electron Devices (CDE)es
dc.description.projectSpanish Ministry of Science, Innovation and Universities and the FEDER program through projects TEC2017-84321-C4-1-R, and TEC2017-84321-C4-2-Res
dc.type.hasVersioninfo:eu-repo/semantics/publishedVersiones


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