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dc.contributor.authorJiménez-Molinos, F.
dc.contributor.authorGarcía García, Héctor 
dc.contributor.authorGonzález, M.B.
dc.contributor.authorDueñas Carazo, Salvador 
dc.contributor.authorCastán Lanaspa, María Helena 
dc.contributor.authorMiranda, E.
dc.contributor.authorCampabadal, F.
dc.contributor.authorRoldán, J.B.
dc.date.accessioned2024-02-12T08:57:00Z
dc.date.available2024-02-12T08:57:00Z
dc.date.issued2021
dc.identifier.citation13th Spanish Conference on Electron Devices (CDE), Sevilla, Spain, 2021, p. 4-7es
dc.identifier.isbn978-1-6654-4452-1es
dc.identifier.urihttps://uvadoc.uva.es/handle/10324/66147
dc.descriptionProducción Científicaes
dc.description.abstractHafnium oxide based memristors were fabricated and multilevel programming driven by a capacitor discharge current through the device was performed. Furthermore, the dynamic memdiode model was used for modeling and analyzing the experimental data.es
dc.format.extent4 p.es
dc.format.mimetypeapplication/pdfes
dc.language.isoenges
dc.publisherInstitute of Electrical and Electronics Engineerses
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses
dc.subject.classificationMemristores
dc.subject.classificationResistive-switching devicees
dc.subject.classificationSet/reset processeses
dc.subject.classificationCapacitores
dc.titleFabrication, characterization and modeling of TiN/Ti/HfO2/W memristors: programming based on an external capacitor dischargees
dc.typeinfo:eu-repo/semantics/conferenceObjectes
dc.identifier.doi10.1109/CDE52135.2021.9455756es
dc.relation.publisherversionhttps://ieeexplore.ieee.org/document/9455756es
dc.title.event13th Spanish Conference on Electron Devices (CDE)es
dc.description.projectSpanish Ministry of Science, Innovation and Universities and the FEDER program through projects TEC2017-84321-C4-I-R, TEC2017-84321-C4-2-R, TEC2017-84321-C4-3-R, TEC2017-84321-C4-4-Res
dc.type.hasVersioninfo:eu-repo/semantics/publishedVersiones


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