Study From Cryogenic to High Temperatures of the High- and Low-Resistance-State Currents of ReRAM Ni–HfO2–Si Capacitors

Vaca Rodríguez, César; Gonzalez, Mireia B.; Castán Lanaspa, María Helena; García García, Héctor; Duenas, Salvador; Campabadal, Francesca; Miranda, Enrique; Bailon, Luis A.

doi:10.1109/ted.2016.2546898

Por favor, use este identificador para citar o enlazar este ítem:https://uvadoc.uva.es/handle/10324/82082

Título

Study From Cryogenic to High Temperatures of the High- and Low-Resistance-State Currents of ReRAM Ni–HfO2–Si Capacitors

Autor

Vaca Rodríguez, César

Gonzalez, Mireia B.

Castán Lanaspa, María Helena

García García, Héctor

Duenas, Salvador

Campabadal, Francesca

Miranda, Enrique

Bailon, Luis A.

Año del Documento

2016

Descripción

Producción Científica

Documento Fuente

C. Vaca et al., "Study From Cryogenic to High Temperatures of the High- and Low-Resistance-State Currents of ReRAM Ni–HfO2–Si Capacitors," in IEEE Transactions on Electron Devices, vol. 63, no. 5, pp. 1877-1883, May 2016, doi: 10.1109/TED.2016.2546898

Abstract

Resistive switching conduction in Ni/HfO2/Si capacitors is studied at temperatures ranging from 77 to 473 K. A model for the low-resistance state (LRS) consistent with the experimental data is proposed. The LRS current–voltage (I–V) curves show a maximum resistance, R0, at zero bias and a minimum value, R∞, at voltages close to reset, which indicates a departure from linearity. A three-parameter model for the I–V curves is reported and its temperature dependence analyzed.

ISSN

0018-9383

Revisión por pares

DOI

10.1109/ted.2016.2546898