Título
Experimental data of the paper: Nanoscale characterization of stress in Si nanowires for semiconductor qubit fabrication
Cobertura temporal
start=2025-02-27 ; 2025-12-19
Año del Documento
2026-02-24
Résumé
Raw data of the paper: Nanoscale characterization of stress in Si nanowires for semiconductor qubit fabrication.
Subfolder Free-standing_SiNWs: contains the raw data of the measurements taken along the free-standing Si nanowires and the temperature calibration.
Subfolder SiNWs_with_substrate: contains the raw data of the measurements taken along the Si nanowires with the substrate in the samples C4F2 and C4F10.
Palabras Clave
Silicon Nanowires
Semiconductor Qubits
Micro-Raman Spectroscopy
Stress Engineering
Dry Etching
Spin-Based qubits
Departamento
GdS-Optronlab
Departemento de Física de la Materia Condensada, Cristalografía y Mineralogía
Patrocinador
The authors acknowledge the financial support from grant PID2021-126046OB-C22 funded by MICIU/AEI/10.13039/501100011033 and by “ERDF/EU”. Ginés acknowledges the financial support of Junta de Castilla y León through a predoctoral fellowship
Tipo de versión
info:eu-repo/semantics/submittedVersion
Aparece en las colecciones
Excepté là où spécifié autrement, la license de ce document est décrite en tant que CC0 1.0 Universal