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Título: Molecular dynamics simulation of the early stages of self-interstitial clustering in silicon
Autor: Marqués Cuesta, Luis Alberto
Santos Tejido, Iván
Pelaz Montes, María Lourdes
López Martín, Pedro
Aboy Cebrián, María
Año del Documento: 2016
Editorial: Elsevier
Descripción: Producción Científica
Documento Fuente: Materials Science in Semiconductor Processing Volume 42, Part 2, 2016, Pages 235-238
Resumen: We have studied the early stages of self-interstitial clustering in silicon using molecular dynamics simulation techniques. We have generated silicon samples of over 200,000 atoms where we introduced a 0.5% extra concentration of self-interstitials. Then samples were annealed at several temperatures. During the simulations we observed the formation of interstitial clusters with different atomic structures, ranging from spherical and amorphous-like clusters, to highly ordered extended configurations such as (110) chains, {111} rod-like defects and dislocation loops, and {100} planar defects. This last type of defects, while common in germanium, have not been observed in silicon until very recently, in ultra-fast laser annealing experiments. The particular morphology of formed interstitial clusters is found to be related to the annealing temperature, as it is observed in the experiments. From the molecular dynamics simulations we have analyzed the atomic mechanisms leading to the formation and growth of interstitial clusters, with special attention to the newly found {100} planar defects
Palabras Clave: Atomistic simulation
Molecular dynamics
Dinámica molecular
Revisión por Pares: SI
DOI: https://doi.org/10.1016/j.mssp.2015.07.020
Patrocinador: Ministerio de Ciencia e Innovación (Proyect TEC2011-27701)
Junta de Castilla y León (programa de apoyo a proyectos de investigación - Ref. VA331U14)
Version del Editor: http://www.sciencedirect.com/science/article/pii/S1369800115300585
Idioma: eng
URI: http://uvadoc.uva.es/handle/10324/28014
Derechos: info:eu-repo/semantics/openAccess
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