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Título: Atomistic modeling of ion implantation technologies in silicon
Autor: Marqués Cuesta, Luis Alberto
Santos Tejido, Iván
Pelaz Montes, María Lourdes
López Martín, Pedro
Aboy Cebrián, María
Año del Documento: 2015
Editorial: Elsevier
Descripción: Producción Científica
Documento Fuente: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Volume 352, 2015, Pages 148-151
Resumen: Requirements for the manufacturing of electronic devices at the nanometric scale are becoming more and more demanding on each new technology node, driving the need for the fabrication of ultra-shallow junctions and finFET structures. Main implantation strategies, cluster and cold implants, are aimed to reduce the amount of end-of-range defects through substrate amorphization. During finFET doping the device body gets amorphized, and its regrowth is more problematic than in the case of conventional planar devices. Consequently, there is a renewed interest on the modeling of amorphization and recrystallization in the front-end processing of Si. We present multi-scale simulation schemes to model amorphization and recrystallization in Si from an atomistic perspective. Models are able to correctly predict damage formation, accumulation and regrowth, both in the ballistic and thermal-spike regimes, in very good agreement with conventional molecular dynamics techniques but at a much lower computational cost.
Palabras Clave: Atomistic simulation
Multi-scale schemes
Silicio
Revisión por Pares: SI
DOI: https://doi.org/10.1016/j.nimb.2014.11.105
Patrocinador: Ministerio de Ciencia e Innovación (Proyect EC2011-27701)
Version del Editor: http://www.sciencedirect.com/science/article/pii/S0168583X14010064
Idioma: eng
URI: http://uvadoc.uva.es/handle/10324/28015
Derechos: info:eu-repo/semantics/openAccess
Aparece en las colecciones:DEP22 - Artículos de revista

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