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Now showing items 41-45 of 45

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The curious case of thin-body Ge crystallization

Duffy, Ray; Shayesteh, M.; McCarthy, B.; Blake, A.; White, M.; Scully, J.; Yu, R.; Kelleher, A. M.; Schmidt, M.; Petkov, N.; Pelaz Montes, María Lourdes

; Marqués Cuesta, Luis Alberto

(2011)

Elucidating the atomistic mechanisms driving self-diffusion of amorphous Si during annealing

Santos Tejido, Iván

; Pelaz Montes, María Lourdes

; Marqués Cuesta, Luis Alberto

; Colombo, Luciano (2011)

Atomistic analysis of B clustering and mobility degradation in highly B-doped junctions

Aboy Cebrián, María

; Pelaz Montes, María Lourdes

; López Martín, Pedro

; Bruno, Elena; Mirabella, Salvo (2010)

Simulation of p-n junctions: Present and future challenges for technologies beyond 32 nm

Pelaz Montes, María Lourdes

; Marqués Cuesta, Luis Alberto

; Aboy Cebrián, María

; Santos Tejido, Iván

; López Martín, Pedro

; Duffy, Ray (2010)

Self-trapping in B-doped amorphous Si: Intrinsic origin of low acceptor efficiency

Santos Tejido, Iván

; Castrillo, P.; Windl, W.; Drabold, D. A.; Pelaz Montes, María Lourdes

; Marqués Cuesta, Luis Alberto

(2010)

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