Listar Electrónica - Comunicaciones a congresos, conferencias, etc. por autor "López Martín, Pedro"

Aviso: Si va a participar en la campaña de sexenios 2024, le recomendamos que deposite en UVaDoc de forma preferente las aportaciones que vaya a presentar a dicha convocatoria (opción Autoarchivo). El resto de sus publicaciones podrá subirlas al repositorio en cualquier otro momento. Gracias.

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Atomistic study of the anisotropic interaction between extended and point defects in crystalline silicon and its influence on Si self-interstitial diffusion

Santos Tejido, Iván ; Aboy Cebrián, María ; Marqués Cuesta, Luis Alberto ; López Martín, Pedro ; Ruiz Prieto, Manuel; Pelaz Montes, María Lourdes ; Hernández Díaz, A.M.; Castrillo, P. (2016)
Characterization of amorphous Si generated through classical molecular dynamics simulations

Santos Tejido, Iván ; López Martín, Pedro ; Aboy Cebrián, María ; Marqués Cuesta, Luis Alberto ; Pelaz Montes, María Lourdes (2017)
Evaluation of energy barriers for topological transitions of Si self-interstitial clusters by classical molecular dynamics and the kinetic activation-relaxation technique

López Martín, Pedro ; Santos Tejido, Iván ; Aboy Cebrián, María ; Marqués Cuesta, Luis Alberto ; Trochet, M.; Mousseau, N.; Pelaz Montes, María Lourdes (2017)
First Principles Characterization of PnVm Clusters in Crystalline Silicon

Santos Tejido, Iván ; Aboy Cebrián, María ; López Martín, Pedro ; Marqués Cuesta, Luis Alberto ; Martín Encinar, Luis; Pelaz Montes, María Lourdes (2023)
IONDegradation in Si Devices in Harsh Radiation Environments: Modeling of Damage-Dopant Interactions

López Martín, Pedro ; Aboy Cebrián, María ; Muñoz, I.; Santos Tejido, Iván ; Marqués Cuesta, Luis Alberto ; Couso, Carlos; Ullán, Miguel; Pelaz Montes, María Lourdes (2019)
Modeling SiGe through classical molecular dynamics simulations: chasing an appropriate empirical potential

Martín Encinar, Luis; Santos Tejido, Iván ; López Martín, Pedro ; Marqués Cuesta, Luis Alberto ; Aboy Cebrián, María ; Pelaz Montes, María Lourdes (2019)
Molecular Dynamics Study of Stress Relaxation During Ge Deposition on Si(100) 2×1 Substrates

Martín Encinar, Luis; Marqués Cuesta, Luis Alberto ; Aboy Cebrián, María ; López Martín, Pedro ; Santos Tejido, Iván ; Pelaz Montes, María Lourdes (2023)

Listar Electrónica - Comunicaciones a congresos, conferencias, etc. por autor "López Martín, Pedro" Google Citations

Atomistic study of the anisotropic interaction between extended and point defects in crystalline silicon and its influence on Si self-interstitial diffusion ﻿

Characterization of amorphous Si generated through classical molecular dynamics simulations ﻿

Evaluation of energy barriers for topological transitions of Si self-interstitial clusters by classical molecular dynamics and the kinetic activation-relaxation technique ﻿

First Principles Characterization of PnVm Clusters in Crystalline Silicon ﻿

IONDegradation in Si Devices in Harsh Radiation Environments: Modeling of Damage-Dopant Interactions ﻿

Modeling SiGe through classical molecular dynamics simulations: chasing an appropriate empirical potential ﻿

Molecular Dynamics Study of Stress Relaxation During Ge Deposition on Si(100) 2×1 Substrates ﻿

Atomistic study of the anisotropic interaction between extended and point defects in crystalline silicon and its influence on Si self-interstitial diffusion

Characterization of amorphous Si generated through classical molecular dynamics simulations

Evaluation of energy barriers for topological transitions of Si self-interstitial clusters by classical molecular dynamics and the kinetic activation-relaxation technique

First Principles Characterization of PnVm Clusters in Crystalline Silicon

IONDegradation in Si Devices in Harsh Radiation Environments: Modeling of Damage-Dopant Interactions

Modeling SiGe through classical molecular dynamics simulations: chasing an appropriate empirical potential

Molecular Dynamics Study of Stress Relaxation During Ge Deposition on Si(100) 2×1 Substrates