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Título
Modeling and experimental characterization of stepped and v-shaped {311} defects in silicon
Autor
Año del Documento
2014
Editorial
AIP Publishing
Descripción
Producción Científica
Documento Fuente
Journal of Applied Physics, 2014, 115, p. 143514
Résumé
We propose an atomistic model to describe extended {311} defects in silicon. It is based on the combination of interstitial and bond defect chains. The model is able to accurately reproduce not only planar {311} defects but also defect structures that show steps, bends, or both. We use molecular dynamics techniques to show that these interstitial and bond defect chains spontaneously transform into extended {311} defects. Simulations are validated by comparing with precise experimental measurements on actual {311} defects. The excellent agreement between the simulated and experimentally derived structures, regarding individual atomic positions and shape of the distinct structural {311} defect units, provides strong evidence for the robustness of the proposed model.
Palabras Clave
Atomistic model
Silicon
Silicio
ISSN
0021-8979
Revisión por pares
SI
Patrocinador
Ministerio de Ciencia e Innovación (Proyect TEC2011-27701)
Version del Editor
Idioma
eng
Derechos
openAccess
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