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Memory maps : Reading RRAM devices without power consumption

Dueñas Carazo, Salvador

; Castán Lanaspa, María Helena

; Kukli, Kaupo; Mikkor, Mats; Kalam, Kristjan; Arroval, T.; Tamm, Aile (2018)

Resistive switching properties of atomic layer deposited ZrO2-HfO2 thin films

González Ossorio, Óscar

; Dueñas Carazo, Salvador

; Castán Lanaspa, María Helena

; Tamm, Aile; Kalam, Kristjan; Seemen, Helina; Kukli, Kaupo (2018)

Study of the influence of the dielectric composition of Al/Ti/ZrO2 : Al2O3/TiN/Si/Al structures on the resistive switching behavior for memory applications

Castán Lanaspa, María Helena

; Dueñas Carazo, Salvador

; Kukli, Kaupo; Kemell, Marianna; Ritala, Mikko; Leskelä, Markku (2018)

The role of defects in the resistive switching behavior of Ta2O5-TiO2-based metal–insulator–metal (MIM) devices for memory applications

Dueñas Carazo, Salvador

; Castán Lanaspa, María Helena

; García García, Héctor

; González Ossorio, Óscar

; Domínguez, Leidy Azucena; Seemen, Helina; Tamm, Aile; Kukli, Kaupo; Aarik, Jaan (2018)

Electrical characterization of defects created by γ-radiation in HfO2-based MIS structures for RRAM applications

García García, Héctor

; Bargalló González, Mireia; Mallol, M. M.; Castán Lanaspa, María Helena

; Dueñas Carazo, Salvador

; Campabadal Segura, Francesca; Acero, M. C.; Sambuco Salomone, L.; Faigón, A. (2018)

Energy levels of defects created in silicon supersaturated with transition metals

García García, Héctor

; Castán Lanaspa, María Helena

; García Hemme, E.; García Hernansaz, R.; Montero, D.; González Díaz, G. (2018)

Atomic layer deposition and properties of ZrO2/Fe2O3 thin films

Kalam, Kristjan; Seemen, Helina; Ritslaid, Peeter; Rähn, Mihkel; Tamm, Aile; Kukli, Kaupo; Kasikov, Aarne; Link, Joosep; Stern, Raivo; Dueñas Carazo, Salvador

; Castán Lanaspa, María Helena

; García García, Héctor

(2018)

Capacitance Spectroscopy for MOS Systems

Dueñas Carazo, Salvador

; Castán Lanaspa, María Helena

(2018)

Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters

Castán Lanaspa, María Helena

; Dueñas Carazo, Salvador

; García García, Héctor

; González Ossorio, Óscar

; Domínguez, Leidy Azucena; Sahelices Fernández, Benjamín

; Miranda, E.; Bargalló González, Mireia; Campabadal Segura, Francesca (2018)

Properties of atomic layer deposited nanolaminates of zirconium and cobalt oxides

Seemen, Helina; Rähn, Mihkel; Kalam, Kristjan; Sajavaara, Timo; Dueñas Carazo, Salvador

; Castán Lanaspa, María Helena

; Link, Joosep; Stern, Raivo; Kukli, Kaupo; Tamm, Aile (2018)

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