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Effect of dielectric thickness on resistive switching polarity in TiN/Ti/HfO2/Pt stacks

Vinuesa Sanz, Guillermo

; García García, Héctor

; Bargalló González, Mireia; Kalam, Kristjan; Zabala, Miguel; Tarre, Aivar; Kukli, Kaupo; Tamm, Aile; Campabadal Segura, Francesca; Jiménez López, Juan Ignacio

; Castán Lanaspa, María Helena

; Dueñas Carazo, Salvador

(2022)

Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor discharge

García García, Héctor

; Jiménez Molinos, Francisco; Vinuesa Sanz, Guillermo

; Bargalló González, Mireia; Roldán, Juan B.; Miranda, Enrique; Campabadal Segura, Francesca; Castán Lanaspa, María Helena

; Dueñas Carazo, Salvador

(2022)

Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge

García García, Héctor

; Vinuesa Sanz, Guillermo

; González Ossorio, Óscar

; Sahelices Fernández, Benjamín

; Castán Lanaspa, María Helena

; Dueñas Carazo, Salvador

; Bargalló González, Mireia; Campabadal Segura, Francesca (2021)

Influences of the temperature on the electrical properties of HfO2-based resistive switching devices

García García, Héctor

; Boo Alvarez, Jonathan; Vinuesa Sanz, Guillermo

; González Ossorio, Óscar

; Sahelices Fernández, Benjamín

; Dueñas Carazo, Salvador

; Castán Lanaspa, María Helena

; Bargalló González, Mireia; Campabadal Segura, Francesca (2021)

Single and complex devices on three topological configurations of HfO2 based RRAM

González Ossorio, Óscar

; Poblador Cester, Samuel; Vinuesa Sanz, Guillermo

; Dueñas Carazo, Salvador

; Castán Lanaspa, María Helena

; Maestro Izquierdo, Marcos; Bargalló González, Mireia; Campabadal Segura, Francesca (2020)

Electrical characterization of defects created by γ-radiation in HfO2-based MIS structures for RRAM applications

García García, Héctor

; Bargalló González, Mireia; Mallol, M. M.; Castán Lanaspa, María Helena

; Dueñas Carazo, Salvador

; Campabadal Segura, Francesca; Acero, M. C.; Sambuco Salomone, L.; Faigón, A. (2018)

Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters

Castán Lanaspa, María Helena

; Dueñas Carazo, Salvador

; García García, Héctor

; González Ossorio, Óscar

; Domínguez, Leidy Azucena; Sahelices Fernández, Benjamín

; Miranda, E.; Bargalló González, Mireia; Campabadal Segura, Francesca (2018)