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Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge

García García, Héctor

; Vinuesa Sanz, Guillermo; González Ossorio, Óscar

; Sahelices Fernández, Benjamín

; Castán Lanaspa, María Helena

; Dueñas Carazo, Salvador

; Bargalló González, Mireia; Campabadal Segura, Francesca (2021)

Single and complex devices on three topological configurations of HfO2 based RRAM

González Ossorio, Óscar

; Poblador Cester, Samuel; Vinuesa Sanz, Guillermo; Dueñas Carazo, Salvador

; Castán Lanaspa, María Helena

; Maestro Izquierdo, Marcos; Bargalló González, Mireia; Campabadal Segura, Francesca (2020)

Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters

Castán Lanaspa, María Helena

; Dueñas Carazo, Salvador

; García García, Héctor

; González Ossorio, Óscar

; Domínguez, Leidy Azucena; Sahelices Fernández, Benjamín

; Miranda, E.; Bargalló González, Mireia; Campabadal Segura, Francesca (2018)

Electrical characterization of defects created by γ-radiation in HfO2-based MIS structures for RRAM applications

García García, Héctor

; Bargalló González, Mireia; Mallol, M. M.; Castán Lanaspa, María Helena

; Dueñas Carazo, Salvador

; Campabadal Segura, Francesca; Acero, M. C.; Sambuco Salomone, L.; Faigón, A. (2018)