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    Por favor, use este identificador para citar o enlazar este ítem:https://uvadoc.uva.es/handle/10324/58643

    Título
    Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor discharge
    Autor
    García García, HéctorAutoridad UVA Orcid
    Jiménez Molinos, Francisco
    Vinuesa Sanz, GuillermoAutoridad UVA Orcid
    Bargalló González, Mireia
    Roldán, Juan B.
    Miranda, Enrique
    Campabadal Segura, Francesca
    Castán Lanaspa, María HelenaAutoridad UVA Orcid
    Dueñas Carazo, SalvadorAutoridad UVA Orcid
    Año del Documento
    2022
    Editorial
    Elsevier
    Descripción
    Producción Científica
    Documento Fuente
    Solid-State Electronics, 2022, vol. 194, p. 108385
    Résumé
    In this work, we have studied the control of set and the reset transitions in TiN/Ti/HfO2/W resistive switching devices using a new approach based on the injection of a limited amount of charge through the use of a capacitor discharge. Instead of applying conventional voltage or current signals, the capacitor discharge through the devices is able to perform both transitions. An accumulative process is observed if we apply consecutive discharges, and, when increasing the capacitor voltage in each discharge, the transitions between both resistance states are completed. In addition, it has been shown that faster transitions require larger capacitor voltages. Further, the electrical results were used to tune the dynamic memdiode model, which was employed to simulate set and reset processes driven by the capacitor discharges. The model successfully reproduced the measured memristor response to the capacitor discharge.
    Materias Unesco
    33 Ciencias Tecnológicas
    22 Física
    Palabras Clave
    Memristors
    Resisitive switching
    ReRAM
    Set processes
    Reset processes
    ISSN
    0038-1101
    Revisión por pares
    SI
    DOI
    10.1016/j.sse.2022.108385
    Patrocinador
    Ministerio de Ciencia, Innovación y Universidades y programa FEDER (proyectos TEC2017-84321-C4-1-R, TEC2017-84321-C4-2-R, TEC2017-84321-C4-3-R y TEC2017-84321-C4-4-R)
    Version del Editor
    https://www.sciencedirect.com/science/article/pii/S0038110122001575
    Propietario de los Derechos
    © 2022 The Author(s)
    Idioma
    eng
    URI
    https://uvadoc.uva.es/handle/10324/58643
    Tipo de versión
    info:eu-repo/semantics/publishedVersion
    Derechos
    openAccess
    Aparece en las colecciones
    • GCME - Artículos de revista [57]
    • DEP22 - Artículos de revista [65]
    Afficher la notice complète
    Fichier(s) constituant ce document
    Nombre:
    Study-TiN-Ti-HfO2-W-resistive-switching-devices.pdf
    Tamaño:
    4.217Mo
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    Attribution-NonCommercial-NoDerivatives 4.0 InternacionalExcepté là où spécifié autrement, la license de ce document est décrite en tant que Attribution-NonCommercial-NoDerivatives 4.0 Internacional

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