Grupo de Caracterización de Materiales y Dispositivos Electrónicos (GCME)

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Thermal dependence of the current in TiN/Ti/HfO2/W memristors at different intermediate conduction states

Vinuesa Sanz, Guillermo; García, Hector; Dueñas Carazo, Salvador ; Castán Lanaspa, María Helena ; Jiménez-Molinos, Francisco; González, Mireia B.; Campabadal, Francesca; Roldán, Juan B. (2014-08-15)
3DWS: reliable segmentation on intelligent welding systems with 3D convolutions

Fernández Iglesias, Jesús; Valerieva Ivanova, Dilyana; Higuero, Luis; Sahelices Fernández, Benjamín (2023)
Interpretability of deep learning models in analysis of Spanish financial text

Vaca, César; Astorgano, Manuel; López-Rivero, Alfonso J.; Tejerina, Fernando; Sahelices, Benjamín (2024)
Thermal Dependence of the Resistance of TiN/Ti/HfO2/Pt Memristors

Jimenez-Molinos, F.; Vinuesa Sanz, Guillermo; García, H.; Tarre, A.; Tamm, A.; Kalam, K.; Kukli, K.; Dueñas Carazo, Salvador ; Castán Lanaspa, María Helena ; González, M.B.; Campabadal, F.; Maldonado, D.; Cantudo, A.; Roldán, J.B. (2023)
RRAM Memories with ALD High-K Dielectrics: Electrical Characterization and Analytical Modeling

Castán Lanaspa, María Helena ; Dueñas Carazo, Salvador ; Sardiña, A.; García García, Héctor ; Arroval, T.; Tamm, A.; Jõgiaas, T.; Kukli, K.; Aarik, J. (2017)