Sfoglia Untitled per Titolo

3DWS: reliable segmentation on intelligent welding systems with 3D convolutions

Fernández Iglesias, Jesús; Valerieva Ivanova, Dilyana; Higuero, Luis; Sahelices Fernández, Benjamín

(2023)

A physically based model for resistive memories including a detailed temperature and variability description

González-Cordero, G.; González, M.B.; García García, Héctor

; Campabadal, F.; Dueñas Carazo, Salvador

; Castán Lanaspa, María Helena

; Jiménez-Molinos, Francisco; Roldán, J.B. (2017)

A physically based model to describe resistive switching in different RRAM technologies

González-Cordero, G.; González, M.B.; García García, Héctor

; Campabadal, F.; Dueñas Carazo, Salvador

; Castán Lanaspa, María Helena

; Jiménez-Molinos, F.; Roldán, J.B. (2017)

A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories

Maldonado, D; Vinuesa Sanz, Guillermo

; Aldana, S; Aguirre, F.L.; Cantudo, A; García García, Héctor

; González, M. B.; Jiménez Molinos, Francisco; Campabadal Segura, Francesca; Miranda, E.; Dueñas Carazo, Salvador

; Castán Lanaspa, María Helena

; Roldán, J.B. (2024)

Admittance memory cycles of Ta2O5-ZrO2-based RRAM devices

Dueñas Carazo, Salvador

; Castán Lanaspa, María Helena

; González Ossorio, Óscar

; Domínguez, Leidy Azucena; García García, Héctor

; Kalam, Kristjan; Kukli, Kaupo; Ritala, Mikko; Leskelä, Markku (2017)

Advanced electrical characterization of atomic layer deposited Al2O3 MIS-based structures

García García, Héctor

; Castán Lanaspa, María Helena

; Dueñas Carazo, Salvador

; González, M.B.; Acero, M.C.; Campabadal, F. (2017)

An experimental and simulation study of the role of thermal effects on variability in TiN/Ti/HfO2/W resistive switching nonlinear devices

Maldonado, D.; Aguilera-Pedregosa, C.; Vinuesa Sanz, Guillermo

; García García, Héctor

; Dueñas Carazo, Salvador

; Castán Lanaspa, María Helena

; Aldana, S.; González, M.B.; Moreno, E.; Jiménez-Molinos, F.; Campabadal, F.; Roldán, J.B. (2022)

Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters

Castán Lanaspa, María Helena

; Dueñas Carazo, Salvador

; García García, Héctor

; González Ossorio, Óscar

; Domínguez, Leidy Azucena; Sahelices Fernández, Benjamín

; Miranda, E.; Bargalló González, Mireia; Campabadal Segura, Francesca (2018)

Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications

González Ossorio, Óscar

; Vinuesa Sanz, Guillermo

; García García, Héctor

; Sahelices Fernández, Benjamín

; Dueñas Carazo, Salvador

; Castán Lanaspa, María Helena

; Ritala, Mikko; Leskelä, Markku; Kemell, Marianna; Kukli, Kaupo (2021)

Atomic layer deposited nanolaminates of zirconium oxide and manganese oxide from manganese(III)acetylacetonate and ozone

Kalam, Kristjan; Rammula, Raul; Ritslaid, Peeter; Käämbre, Tanel; Link, Joosep; Stern, Raivo; Vinuesa Sanz, Guillermo

; Dueñas Carazo, Salvador

; Castán Lanaspa, María Helena

; Tamm, Aile; Kukli, Kaupo (2021)

(2018)

Capacitance Spectroscopy for MOS Systems

Dueñas Carazo, Salvador

; Castán Lanaspa, María Helena

(2018)

Control of the set and reset voltage polarity in anti-series and anti-parallel resistive switching structures

García García, Héctor

; Domínguez, Luis Antonio; Castán Lanaspa, María Helena

; Dueñas Carazo, Salvador

(2019)

Controlling the intermediate conductance states in RRAM devices for synaptic applications

García García, Héctor

; González Ossorio, Óscar

; Dueñas Carazo, Salvador

; Castán Lanaspa, María Helena

(2019)

Current and Voltage Control of Intermediate States in Bipolar Rram Devices for Neuristor Applications

García García, Héctor

; González Ossorio, Óscar

; Dueñas Carazo, Salvador

; Castán Lanaspa, María Helena

(2020)

Current pulses to control the conductance in RRAM devices

García García, Héctor

; Dueñas Carazo, Salvador

; González Ossorio, Óscar

; Castán Lanaspa, María Helena

(2020)

Data augmentation in predictive maintenance applicable to hydrogen combustion engines: a review

Schwarz, Alexander; Rodríguez Rahal, Jhonny; Sahelices Fernández, Benjamín

; Barroso García, Verónica

; Weis, Ronny; Duque Antón, Simón (2024)

Depression classification from tweets using small deep transfer learning Language Models

Rizwan, Muhammad; Mushtaq, Muhammad Faheem; Akram, Urooj; Mehmood, Arif; Ashraf, Imran; Sahelices Fernández, Benjamín

(2022)

Sfoglia Untitled per Titolo

3DWS: reliable segmentation on intelligent welding systems with 3D convolutions ﻿

A physically based model for resistive memories including a detailed temperature and variability description ﻿

A physically based model to describe resistive switching in different RRAM technologies ﻿

A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories ﻿

Admittance memory cycles of Ta2O5-ZrO2-based RRAM devices ﻿

Advanced electrical characterization of atomic layer deposited Al2O3 MIS-based structures ﻿

An experimental and simulation study of the role of thermal effects on variability in TiN/Ti/HfO2/W resistive switching nonlinear devices ﻿

Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters ﻿

Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications ﻿

Atomic layer deposited nanolaminates of zirconium oxide and manganese oxide from manganese(III)acetylacetonate and ozone ﻿

Atomic layer deposition and performance of ZrO2-Al2O3 thin films ﻿

Atomic layer deposition and properties of HfO2-Al2O3 nanolaminates ﻿

Atomic layer deposition and properties of ZrO2/Fe2O3 thin films ﻿

Capacitance Spectroscopy for MOS Systems ﻿

Control of the set and reset voltage polarity in anti-series and anti-parallel resistive switching structures ﻿

Controlling the intermediate conductance states in RRAM devices for synaptic applications ﻿

Current and Voltage Control of Intermediate States in Bipolar Rram Devices for Neuristor Applications ﻿

Current pulses to control the conductance in RRAM devices ﻿

Data augmentation in predictive maintenance applicable to hydrogen combustion engines: a review ﻿

Depression classification from tweets using small deep transfer learning Language Models ﻿

3DWS: reliable segmentation on intelligent welding systems with 3D convolutions

A physically based model for resistive memories including a detailed temperature and variability description

A physically based model to describe resistive switching in different RRAM technologies

A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories

Admittance memory cycles of Ta2O5-ZrO2-based RRAM devices

Advanced electrical characterization of atomic layer deposited Al2O3 MIS-based structures

An experimental and simulation study of the role of thermal effects on variability in TiN/Ti/HfO2/W resistive switching nonlinear devices

Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters

Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications

Atomic layer deposited nanolaminates of zirconium oxide and manganese oxide from manganese(III)acetylacetonate and ozone

Atomic layer deposition and performance of ZrO2-Al2O3 thin films

Atomic layer deposition and properties of HfO2-Al2O3 nanolaminates

Atomic layer deposition and properties of ZrO2/Fe2O3 thin films

Capacitance Spectroscopy for MOS Systems

Control of the set and reset voltage polarity in anti-series and anti-parallel resistive switching structures

Controlling the intermediate conductance states in RRAM devices for synaptic applications

Current and Voltage Control of Intermediate States in Bipolar Rram Devices for Neuristor Applications

Current pulses to control the conductance in RRAM devices

Data augmentation in predictive maintenance applicable to hydrogen combustion engines: a review

Depression classification from tweets using small deep transfer learning Language Models