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Memory effects in nanolaminates of hafnium and iron oxide films structured by atomic layer deposition

Kalam, Kristjan; Otsus, Markus; Kozlova, Jekaterina; Tarre, Aivar; Kasikov, Aarne; Rammula, Raul; Link, Joosep; Stern, Raivo; Vinuesa Sanz, Guillermo ; Lendínez Sánchez, José Miguel; Dueñas Carazo, Salvador ; Castán Lanaspa, María Helena ; Tamm, Aile; Kukli, Kaupo (2022)
Variability and power enhancement of current controlled resistive switching devices

Vinuesa Sanz, Guillermo ; García García, Héctor ; Lendínez Sánchez, José Miguel; García Ochoa, Eduardo; González, M. B.; Maldonado, D; Aguilera Pedregosa, C; Moreno, E; Jiménez Molinos, Francisco; Roldán, J.B.; Campabadal Segura, Francesca; Castán Lanaspa, María Helena ; Dueñas Carazo, Salvador (2023)
Influences of the temperature on the electrical properties of HfO2-based resistive switching devices

García García, Héctor ; Boo Alvarez, Jonathan; Vinuesa Sanz, Guillermo ; González Ossorio, Óscar ; Sahelices Fernández, Benjamín ; Dueñas Carazo, Salvador ; Castán Lanaspa, María Helena ; Bargalló González, Mireia; Campabadal Segura, Francesca (2021)
Programming pulse width assessment for reliable and low-energy endurance performance in Al:HfO2-Based RRAM arrays

Pérez, Eduardo; González Ossorio, Óscar ; Dueñas Carazo, Salvador ; Castán Lanaspa, María Helena ; García García, Héctor ; Wenger, Christian (2020)
Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor discharge

García García, Héctor ; Jiménez Molinos, Francisco; Vinuesa Sanz, Guillermo ; Bargalló González, Mireia; Roldán, Juan B.; Miranda, Enrique; Campabadal Segura, Francesca; Castán Lanaspa, María Helena ; Dueñas Carazo, Salvador (2022)