Envíos recientes

Mostrando ítems 26-30 de 57

Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge

García García, Héctor ; Vinuesa Sanz, Guillermo ; González Ossorio, Óscar ; Sahelices Fernández, Benjamín ; Castán Lanaspa, María Helena ; Dueñas Carazo, Salvador ; Bargalló González, Mireia; Campabadal Segura, Francesca (2021)
Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications

González Ossorio, Óscar ; Vinuesa Sanz, Guillermo ; García García, Héctor ; Sahelices Fernández, Benjamín ; Dueñas Carazo, Salvador ; Castán Lanaspa, María Helena ; Ritala, Mikko; Leskelä, Markku; Kemell, Marianna; Kukli, Kaupo (2021)
Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices

Vinuesa Sanz, Guillermo ; González Ossorio, Óscar ; García García, Héctor ; Sahelices Fernández, Benjamín ; Castán Lanaspa, María Helena ; Dueñas Carazo, Salvador ; Kukli, Kaupo; Kull, M; Tarre, Aivar; Jõgiaas, Taivo; Tamm, Aile; Kasikov, Aarne (2021)
Thermoelectrical characterization of piezoelectric diaphragms: Towards a better understanding of ferroelectrics for future memory applications

Vinuesa Sanz, Guillermo ; Marín, Pelayo; González Ossorio, Óscar ; Sahelices Fernández, Benjamín ; García García, Héctor ; Castán Lanaspa, María Helena ; Dueñas Carazo, Salvador (2021)
Performance assessment of amorphous HfO2-based RRAM devices for neuromorphic applications

González Ossorio, Óscar ; Vinuesa Sanz, Guillermo ; García García, Héctor ; Sahelices Fernández, Benjamín ; Dueñas Carazo, Salvador ; Castán Lanaspa, María Helena ; Pérez, Eduardo; Kalishettyhalli Mahadevaiah, Mamathamba; Wenger, Christian (2021)

GCME- Artículos de revista: Envíos recientes

Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge ﻿

Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications ﻿

Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices ﻿

Thermoelectrical characterization of piezoelectric diaphragms: Towards a better understanding of ferroelectrics for future memory applications ﻿

Performance assessment of amorphous HfO2-based RRAM devices for neuromorphic applications ﻿

Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge

Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications

Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices

Thermoelectrical characterization of piezoelectric diaphragms: Towards a better understanding of ferroelectrics for future memory applications

Performance assessment of amorphous HfO2-based RRAM devices for neuromorphic applications