Navegação GCME - Comunicaciones a congresos, conferencias, etc. por autor "Dueñas Carazo, Salvador"

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A physically based model to describe resistive switching in different RRAM technologies

González-Cordero, G.; González, M.B.; García García, Héctor ; Campabadal, F.; Dueñas Carazo, Salvador ; Castán Lanaspa, María Helena ; Jiménez-Molinos, F.; Roldán, J.B. (2017)
Admittance memory cycles of Ta2O5-ZrO2-based RRAM devices

Dueñas Carazo, Salvador ; Castán Lanaspa, María Helena ; González Ossorio, Óscar ; Domínguez, Leidy Azucena; García García, Héctor ; Kalam, Kristjan; Kukli, Kaupo; Ritala, Mikko; Leskelä, Markku (2017)
Advanced electrical characterization of atomic layer deposited Al2O3 MIS-based structures

García García, Héctor ; Castán Lanaspa, María Helena ; Dueñas Carazo, Salvador ; González, M.B.; Acero, M.C.; Campabadal, F. (2017)
Effective reduction of the programing pulse width in Al: HfO2-based RRAM arrays

González Ossorio, Óscar ; Pérez, Eduardo; Dueñas Carazo, Salvador ; Castán Lanaspa, María Helena ; García García, Héctor ; Wenger, Christian (2019)
Fabrication, characterization and modeling of TiN/Ti/HfO2/W memristors: programming based on an external capacitor discharge

Jiménez-Molinos, F.; García García, Héctor ; González, M.B.; Dueñas Carazo, Salvador ; Castán Lanaspa, María Helena ; Miranda, E.; Campabadal, F.; Roldán, J.B. (2021)
Resistive switching properties of atomic layer deposited ZrO2-HfO2 thin films

González Ossorio, Óscar ; Dueñas Carazo, Salvador ; Castán Lanaspa, María Helena ; Tamm, Aile; Kalam, Kristjan; Seemen, Helina; Kukli, Kaupo (2018)
Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes

Santa Cruz González, C.; Sahelices Fernández, Benjamín ; Jiménez López, Juan Ignacio ; González Ossorio, Óscar ; Castán Lanaspa, María Helena ; González, M.B.; Vinuesa Sanz, Guillermo ; Dueñas Carazo, Salvador ; Campabadal, F.; García García, Héctor (2021)
Single and complex devices on three topological configurations of HfO2 based RRAM

González Ossorio, Óscar ; Poblador Cester, Samuel; Vinuesa Sanz, Guillermo ; Dueñas Carazo, Salvador ; Castán Lanaspa, María Helena ; Maestro Izquierdo, Marcos; Bargalló González, Mireia; Campabadal Segura, Francesca (2020)
Thermal Dependence of the Resistance of TiN/Ti/HfO2/Pt Memristors

Jimenez-Molinos, F.; Vinuesa Sanz, Guillermo ; García García, Héctor ; Tarre, A.; Tamm, A.; Kalam, K.; Kukli, K.; Dueñas Carazo, Salvador ; Castán Lanaspa, María Helena ; González, M.B.; Campabadal, F.; Maldonado, D.; Cantudo, A.; Roldán, J.B. (2023)
Using current pulses to control the intermediate conductance states in hafnium oxide-based RRAM devices

García García, Héctor ; González Ossorio, Óscar ; Dueñas Carazo, Salvador ; Castán Lanaspa, María Helena (2020)

Navegação GCME - Comunicaciones a congresos, conferencias, etc. por autor "Dueñas Carazo, Salvador" Google Citations

A physically based model to describe resistive switching in different RRAM technologies ﻿

Admittance memory cycles of Ta2O5-ZrO2-based RRAM devices ﻿

Advanced electrical characterization of atomic layer deposited Al2O3 MIS-based structures ﻿

Effective reduction of the programing pulse width in Al: HfO2-based RRAM arrays ﻿

Fabrication, characterization and modeling of TiN/Ti/HfO2/W memristors: programming based on an external capacitor discharge ﻿

Resistive switching properties of atomic layer deposited ZrO2-HfO2 thin films ﻿

Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes ﻿

Single and complex devices on three topological configurations of HfO2 based RRAM ﻿

Thermal Dependence of the Resistance of TiN/Ti/HfO2/Pt Memristors ﻿

Using current pulses to control the intermediate conductance states in hafnium oxide-based RRAM devices ﻿

A physically based model to describe resistive switching in different RRAM technologies

Admittance memory cycles of Ta2O5-ZrO2-based RRAM devices

Advanced electrical characterization of atomic layer deposited Al2O3 MIS-based structures

Effective reduction of the programing pulse width in Al: HfO2-based RRAM arrays

Fabrication, characterization and modeling of TiN/Ti/HfO2/W memristors: programming based on an external capacitor discharge

Resistive switching properties of atomic layer deposited ZrO2-HfO2 thin films

Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes

Single and complex devices on three topological configurations of HfO2 based RRAM

Thermal Dependence of the Resistance of TiN/Ti/HfO2/Pt Memristors

Using current pulses to control the intermediate conductance states in hafnium oxide-based RRAM devices