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Mostrando ítems 6-10 de 13

A physically based model to describe resistive switching in different RRAM technologies

González-Cordero, G.; González, M.B.; García García, Héctor ; Campabadal, F.; Dueñas Carazo, Salvador ; Castán Lanaspa, María Helena ; Jiménez-Molinos, F.; Roldán, J.B. (2017)
Advanced electrical characterization of atomic layer deposited Al2O3 MIS-based structures

García García, Héctor ; Castán Lanaspa, María Helena ; Dueñas Carazo, Salvador ; González, M.B.; Acero, M.C.; Campabadal, F. (2017)
Low-energy inference machine with multilevel HfO2 RRAM arrays

Milo, V.; Zambelli, Cristian; Olivo, P.; Pérez, Eduardo; González Ossorio, Óscar ; Wenger, Christian; Ielmini, Daniele (2019)
Effective reduction of the programing pulse width in Al: HfO2-based RRAM arrays

González Ossorio, Óscar ; Pérez, Eduardo; Dueñas Carazo, Salvador ; Castán Lanaspa, María Helena ; García García, Héctor ; Wenger, Christian (2019)
Using current pulses to control the intermediate conductance states in hafnium oxide-based RRAM devices

García García, Héctor ; González Ossorio, Óscar ; Dueñas Carazo, Salvador ; Castán Lanaspa, María Helena (2020)