Atomic layer deposition and properties of HfO2-Al2O3 nanolaminates

Abstract

Nanocrystalline HfO2:Al2O3 mixture films and nanolaminates were grown by atomic layer deposition at 350°C from metal chloride precursors and water. Formation of metastable HfO2 polymorphs versus monoclinic phase was affected by the relative amount and thickness of constituent oxide layers. The films exhibited saturative magnetization and charge polarization in externally applied fields at room temperature. The films also demonstrated resistive switching behavior with considerable window between low and high resistance states.