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Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications
dc.contributor.authorGonzález Ossorio, Óscar 
dc.contributor.authorVinuesa Sanz, Guillermo
dc.contributor.authorGarcía García, Héctor 
dc.contributor.authorSahelices Fernández, Benjamín 
dc.contributor.authorDueñas Carazo, Salvador 
dc.contributor.authorCastán Lanaspa, María Helena 
dc.contributor.authorRitala, Mikko
dc.contributor.authorLeskelä, Markku
dc.contributor.authorKemell, Marianna
dc.contributor.authorKukli, Kaupo
dc.date.accessioned2021-09-10T11:10:49Z
dc.date.available2021-09-10T11:10:49Z
dc.date.issued2021
dc.identifier.citationSolid-State Electronics, 2021, vol. 186, p. 108114es
dc.identifier.issn0038-1101es
dc.identifier.urihttps://uvadoc.uva.es/handle/10324/48634
dc.descriptionProducción Científicaes
dc.description.abstractSince two decades ago, research on resistive memories has continuosly grown, gathering relevance through the variety of different technologies that fit into the non-volatile memories’ area. In this study, we discuss the performance and electrical characteristics of RRAM cells constituted by MIM stacks with dielectric formed by Nb2O5-doped SiO2. We report experimental results that show a clear improvement in the resistive behavior of the devices and an excellent analogical control of the intermediate levels between high-resistance and low-resistance states.es
dc.format.mimetypeapplication/pdfes
dc.language.isoenges
dc.publisherElsevieres
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.subject.classificationRRAMes
dc.subject.classificationNiobium oxidees
dc.subject.classificationSilicon oxidees
dc.titleAnalysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applicationses
dc.typeinfo:eu-repo/semantics/articlees
dc.rights.holder© 2021 Elsevieres
dc.identifier.doi10.1016/j.sse.2021.108114es
dc.relation.publisherversionhttps://www.sciencedirect.com/science/article/pii/S003811012100157Xes
dc.identifier.publicationfirstpage108114es
dc.identifier.publicationtitleSolid-State Electronicses
dc.identifier.publicationvolume186es
dc.peerreviewedSIes
dc.description.projectMinisterio de Ciencia, Innovación y Universidades con el apoyo de fondos Feder (grant TEC2017-84321-C4-2-R)es
dc.description.projectFinnish Centre of Excellence in Atomic Layer Deposition (284623)es
dc.description.projectEstonian Research Agency (PRG753)es
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internacional*
dc.type.hasVersioninfo:eu-repo/semantics/acceptedVersiones
dc.subject.unesco22 Físicaes
dc.subject.unesco33 Ciencias Tecnológicases


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