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Study of the admittance hysteresis cycles in TiN/Ti/HfO2/W-based RRAM devices	260

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Study of the admittance hysteresis cycles in TiN/Ti/HfO2/W-based RRAM devices	96

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1-s2.0-S0167931717301545-main.pdf	42

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November 2025	21
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January 2026	12

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