Memristors have drawn interest due to their use as artificial synapses in neuromorphic circuits. This work investigates the multilevel conductance modulation in Al2O3 and HfO2-based memristors. Specifically, the control of the depression or reset transition when applying identical consecutive voltage pulses was the main objective. Both pulse amplitude and pulse accumulated time can control the reset transition. Voltage required to reset the device is higher for Al2O3, which can lead to higher energy consumption. However, this material showed better reset transition linearity.
