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Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications

González Ossorio, Óscar

; Vinuesa Sanz, Guillermo; García García, Héctor

; Sahelices Fernández, Benjamín

; Dueñas Carazo, Salvador

; Castán Lanaspa, María Helena

; Ritala, Mikko; Leskelä, Markku; Kemell, Marianna; Kukli, Kaupo (2021)

Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge

García García, Héctor

; Vinuesa Sanz, Guillermo; González Ossorio, Óscar

; Sahelices Fernández, Benjamín

; Castán Lanaspa, María Helena

; Dueñas Carazo, Salvador

; Bargalló González, Mireia; Campabadal Segura, Francesca (2021)

Performance assessment of amorphous HfO2-based RRAM devices for neuromorphic applications

González Ossorio, Óscar

; Vinuesa Sanz, Guillermo; García García, Héctor

; Sahelices Fernández, Benjamín

; Dueñas Carazo, Salvador

; Castán Lanaspa, María Helena

; Pérez, Eduardo; Kalishettyhalli Mahadevaiah, Mamathamba; Wenger, Christian (2021)

Atomic layer deposited nanolaminates of zirconium oxide and manganese oxide from manganese(III)acetylacetonate and ozone

Kalam, Kristjan; Rammula, Raul; Ritslaid, Peeter; Käämbre, Tanel; Link, Joosep; Stern, Raivo; Vinuesa Sanz, Guillermo; Dueñas Carazo, Salvador

; Castán Lanaspa, María Helena

; Tamm, Aile; Kukli, Kaupo (2021)

Hafnium oxide/graphene/hafnium oxide-stacked nanostructures as resistive switching media

Kahro, Tauno; Tarre, Aivar; Käämbre, Tanel; Piirsoo, Helle-Mai; Kozlova, Jekaterina; Ritslaid, Peeter; Kasikov, Aarne; Jõgiaas, Taivo; Vinuesa Sanz, Guillermo; Dueñas Carazo, Salvador

; Castán Lanaspa, María Helena

; Tamm, Aile; Kukli, Kaupo (2021)

Performance Assessment of Amorphous HfO2-Based RRAM Devices for Neuromorphic Applications

González Ossorio, Óscar

; Vinuesa Sanz, Guillermo; García García, Héctor

; Sahelices Fernández, Benjamín

; Dueñas Carazo, Salvador

; Castán Lanaspa, María Helena

; Pérez, Eduardo; Kalishettyhalli Mahadevaiah, Mamathamba; Wenger, Christian (2021)

Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices

Vinuesa Sanz, Guillermo; González Ossorio, Óscar

; García García, Héctor

; Sahelices Fernández, Benjamín

; Castán Lanaspa, María Helena

; Dueñas Carazo, Salvador

; Kukli, Kaupo; Kull, M; Tarre, A; Jõgiaas, Taivo; Tamm, Aile; Kasikov, Aarne (2021)

Thermoelectrical characterization of piezoelectric diaphragms: Towards a better understanding of ferroelectrics for future memory applications

Vinuesa Sanz, Guillermo; Marín, Pelayo; González Ossorio, Óscar

; Sahelices Fernández, Benjamín

; García García, Héctor

; Castán Lanaspa, María Helena

; Dueñas Carazo, Salvador

(2021)

Double swing quiescent-current: An experimental detection method of ferroelectricity in very leaky dielectric films

Dueñas Carazo, Salvador

; Castán Lanaspa, María Helena

; González Ossorio, Óscar

; Vinuesa Sanz, Guillermo; García García, Héctor

; Kukli, Kaupo; Leskelä, Markku (2020)

Properties of atomic layer deposited iron oxide and bismuth oxide chloride structures

Seemen, Helina; Kukli, Kaupo; Jõgiaas, Taivo; Ritslaid, Peeter; Link, Joosep; Stern, Raivo; Dueñas Carazo, Salvador

; Castán Lanaspa, María Helena

; Tamm, Aile (2020)

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