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Programming pulse width assessment for reliable and low-energy endurance performance in Al:HfO2-Based RRAM arrays

Pérez, Eduardo; González Ossorio, Óscar ; Dueñas Carazo, Salvador ; Castán Lanaspa, María Helena ; García García, Héctor ; Wenger, Christian (2020)
Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor discharge

García García, Héctor ; Jiménez Molinos, Francisco; Vinuesa Sanz, Guillermo ; Bargalló González, Mireia; Roldán, Juan B.; Miranda, Enrique; Campabadal Segura, Francesca; Castán Lanaspa, María Helena ; Dueñas Carazo, Salvador (2022)
Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge

García García, Héctor ; Vinuesa Sanz, Guillermo ; González Ossorio, Óscar ; Sahelices Fernández, Benjamín ; Castán Lanaspa, María Helena ; Dueñas Carazo, Salvador ; Bargalló González, Mireia; Campabadal Segura, Francesca (2021)
Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications

González Ossorio, Óscar ; Vinuesa Sanz, Guillermo ; García García, Héctor ; Sahelices Fernández, Benjamín ; Dueñas Carazo, Salvador ; Castán Lanaspa, María Helena ; Ritala, Mikko; Leskelä, Markku; Kemell, Marianna; Kukli, Kaupo (2021)
Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices

Vinuesa Sanz, Guillermo ; González Ossorio, Óscar ; García García, Héctor ; Sahelices Fernández, Benjamín ; Castán Lanaspa, María Helena ; Dueñas Carazo, Salvador ; Kukli, Kaupo; Kull, M; Tarre, Aivar; Jõgiaas, Taivo; Tamm, Aile; Kasikov, Aarne (2021)

Grupo de Caracterización de Materiales y Dispositivos Electrónicos (GCME): Envíos recientes

Programming pulse width assessment for reliable and low-energy endurance performance in Al:HfO2-Based RRAM arrays ﻿

Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor discharge ﻿

Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge ﻿

Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications ﻿

Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices ﻿

Programming pulse width assessment for reliable and low-energy endurance performance in Al:HfO2-Based RRAM arrays

Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor discharge

Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge

Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications

Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices