Título
Admittance memory cycles of Ta2O5-ZrO2-based RRAM devices
Congreso
2017 32nd Conference on Design of Circuits and Integrated Systems (DCIS)
Editorial
Institute of Electrical and Electronics Engineers
Documento Fuente
2017 32nd Conference on Design of Circuits and Integrated Systems (DCIS), 2017, Barcelona, Spain, p. 1-4
Resumen
The resistive switching behavior of Ta 2 O 5 -ZrO 2 -based metal-insulator-metal devices was studied. Asymmetrical and repetitive current-voltage loops were observed. Excellent control of admittance parameters in the intermediate states between the high and low resistance ones was achieved, demonstrating suitability to analog and neuromorphic applications. Admittance memory cycles provide relevant information about the switching mechanism, in which the existence of two different metallic species in the dielectric seems to play an important role.
Palabras Clave
Resistive memories
Admittance memory cycles
Ta2O5:ZrO2 ALD films
Patrocinador
This study has been supported by the Spanish TEC2014 under Grant No. 52152-C3-3-R, and by Finnish Centre of Excellence in Atomic Layer Deposition (Academy of Finland, 284623) and Estonian Academy of Science (SLTFYUPROF)
Tipo de versión
info:eu-repo/semantics/publishedVersion
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