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    Por favor, use este identificador para citar o enlazar este ítem:https://uvadoc.uva.es/handle/10324/67733

    Título
    Thermal dependence of the current in TiN/Ti/HfO2/W memristors at different intermediate conduction states
    Autor
    Vinuesa Sanz, GuillermoAutoridad UVA Orcid
    García García, HéctorAutoridad UVA Orcid
    Dueñas Carazo, SalvadorAutoridad UVA Orcid
    Castán Lanaspa, María HelenaAutoridad UVA Orcid
    Jiménez-Molinos, Francisco
    González, Mireia B.
    Campabadal, Francesca
    Roldán, Juan B.
    Año del Documento
    2014-08-15
    Editorial
    ELSEVIER
    Descripción
    Producción Científica
    Documento Fuente
    Materials Science in Semiconductor Processing, Volume 179, 15 August 2024, 108480
    Abstract
    The dependence of the current in TiN/Ti/HfO2/W devices on the temperature is investigated in the range from 78 K to 340 K. Resistive switching cycles at 78 K are conducted to explore the thermal dependence in filament configurations with different intermediate resistance states. The less conductive states show an increase of the current as the temperature rises, while the fully formed filament displays a metallic-like behavior. A comprehensive model, based on the Stanford Model including a series resistance, is proposed and successfully validated by experimental data. The interplay between the ohmic and non-linear components in the model for different filament states is analyzed, emphasizing the dominance of the non-linear component (and its corresponding thermal dependence) in partially formed filaments and the prevalence of the ohmic component in the fully formed filament, which shows a decreasing current as the temperature rises. A complete compact model for simulation of circuits including the thermal dependence of these devices is developed.
    ISSN
    1873-4081
    Revisión por pares
    SI
    DOI
    10.1016/j.mssp.2024.108480
    Patrocinador
    PID2022-139586NB-C42, PID2022- 139586NB-C43, PID2022-139586NB-C44 funded by MICIU/AEI/ 10.13039/501100011033 and FEDER, UE. IMB authors thank the CSIC funding through project 20225AT012 and the Generalitat de Catalunya- AGAUR for project 2021 SGR 00497. M.B.G. acknowledges the grant RYC2020-030150-I funded by MICIU/AEI/10.13039/501100011033 and by “ESF Investing in your future”
    Version del Editor
    https://www.sciencedirect.com/science/article/pii/S1369800124003767?via%3Dihub
    Idioma
    eng
    URI
    https://uvadoc.uva.es/handle/10324/67733
    Tipo de versión
    info:eu-repo/semantics/publishedVersion
    Derechos
    openAccess
    Aparece en las colecciones
    • GCME - Artículos de revista [57]
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