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Título
Hafnium oxide/graphene/hafnium oxide-stacked nanostructures as resistive switching media
Autor
Año del Documento
2021
Editorial
ACS Publications
Descripción
Producción Científica
Documento Fuente
ACS Applied Nano Materials, 2021. In press. 12 p.
Zusammenfassung
Thin HfO2 films were grown by atomic layer deposition on chemical vapor-deposited large-area graphene. The graphene was transferred, prior to the deposition of the HfO2 overlayer, to the HfO2 bottom dielectric layer pregrown on the Si/TiN substrate. Either HfCl4 or Hf[N(CH3)(C2H5)]4 was used as the metal precursor for the bottom layer. The O2 plasma-assisted process was applied for growing HfO2 from Hf[N(CH3)(C2H5)]4 also on the top of graphene. To improve graphene transfer, the effects of the surface pretreatments of the as-grown and aged Si/TiN/HfO2 substrates were studied and compared. The graphene layer retained its integrity after the plasma processes. Studies on resistive switching on HfO2-graphene-HfO2 nanostructures revealed that the operational voltage ranges in the graphene-HfO2 stacks were modified together with the ratios between high- and low-resistance states.
Palabras Clave
Graphene
Grafeno
Atomic layer deposition
Deposición atómica de capas
Hafnium oxide
Óxido de hafnio
Stacked nanostructures
Nanoestructuras apiladas
ISSN
2574-0970
Revisión por pares
SI
Patrocinador
Fondo Europeo de Desarrollo Regional (projects TK134 and TK141)
Ministerio de Economía, Industria y Competitividad (project TEC2017-84321-C4-2-R)
Estonian Research Agency (projects PRG4 and PRG753)
Ministerio de Economía, Industria y Competitividad (project TEC2017-84321-C4-2-R)
Estonian Research Agency (projects PRG4 and PRG753)
Version del Editor
Propietario de los Derechos
© 2021 ACS Publications
Idioma
eng
Tipo de versión
info:eu-repo/semantics/acceptedVersion
Derechos
openAccess
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