View Item 

Por favor, use este identificador para citar o enlazar este ítem:https://uvadoc.uva.es/handle/10324/66235

Título
Thermal Dependence of the Resistance of TiN/Ti/HfO2/Pt Memristors
Autor
Congreso
2023 14th Spanish Conference on Electron Devices (CDE)
Año del Documento
2023
Editorial
Institute of Electrical and Electronics Engineers (IEEE Xplore)
Descripción Física
4 p.
Descripción
Producción Científica
Documento Fuente
2023 14th Spanish Conference on Electron Devices (CDE)
Abstract
The thermal dependence of the resistance in the low resistance state of TiN/Ti/HfO 2 /Pt memristors has been experimentally studied. After modeling the measured I-V curves, the different resistive components (ohmic and non-linear) have been extracted and their thermal behavior estimated. Finally, the intrinsic series resistance linked to the metallic paths, contacts, and the remnants of the filament during resistive switching is also obtained at different temperatures. The results can be employed to propose physically-based models for circuit simulation.
Palabras Clave
memristor
thermal dependence
resistive switching
ISBN
979-8-3503-0241-7
DOI
10.1109/CDE58627.2023.10339514
Patrocinador
Project B-TIC-624-UGR20 funded by the Consejería de Conocimiento, Investigación y Universidad, Junta de Andalucía (Spain) and the FEDER program. The study was also supported by the European Regional Development Fund project “Emerging orders in quantum and nanomaterials” (TK134), and the Estonian Research Agency (PRG753). M.B.G acknowledges the Ramón y Cajal grant No. RYC2020-030150-I
Version del Editor
https://ieeexplore.ieee.org/document/10339514/metrics#metrics
Idioma
eng
URI
https://uvadoc.uva.es/handle/10324/66235
Tipo de versión
info:eu-repo/semantics/publishedVersion
Derechos
restrictedAccess
Collections
Show full item record
Files in this item
Tamaño:
432.4Kb
Formato:
Adobe PDF
Thumbnail
FilesOpen