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Now showing items 31-36 of 36

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Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters

Castán Lanaspa, María Helena

; Dueñas Carazo, Salvador

; García García, Héctor

; González Ossorio, Óscar

; Domínguez, Leidy Azucena; Sahelices Fernández, Benjamín

; Miranda, E.; González, M. B.; Campabadal Segura, Francesca (2018)

Electric and magnetic properties of atomic layer deposited ZrO2-HfO2 thin films

Kalam, Kristjan; Seemen, Helina; Mikkor, Mats; Ritslaid, Peeter; Stern, Raivo; Dueñas Carazo, Salvador

; Castán Lanaspa, María Helena

; Tamm, Aile; Kukli, Kaupo (2018)

Properties of atomic layer deposited nanolaminates of zirconium and cobalt oxides

Seemen, Helina; Rähn, Mihkel; Kalam, Kristjan; Sajavaara, Timo; Dueñas Carazo, Salvador

; Castán Lanaspa, María Helena

; Link, Joosep; Stern, Raivo; Kukli, Kaupo; Tamm, Aile (2018)

Atomic layer deposition and properties of HfO2-Al2O3 nanolaminates

Kukli, Kaupo; Kemell, Marianna; Castán Lanaspa, María Helena

; Dueñas Carazo, Salvador

; Seemen, Helina; Rähn, Mihkel; Link, Joosep; Stern, Raivo; Ritala, Mikko; Leskelä, Markku (2018)

Electrical characterization of defects created by γ-radiation in HfO2-based MIS structures for RRAM applications

García García, Héctor

; González, M. B.; Mallol, M. M.; Castán Lanaspa, María Helena

; Dueñas Carazo, Salvador

; Campabadal Segura, Francesca; Acero, M. C.; Sambuco Salomone, L.; Faigón, A. (2018)

Admittance memory cycles of Ta2O5-ZrO2-based RRAM devices

Dueñas Carazo, Salvador

; Castán Lanaspa, María Helena

; González Ossorio, Óscar

; Domínguez, Leidy Azucena; García García, Héctor

; Kalam, Kristjan; Kukli, Kaupo; Ritala, Mikko; Leskelä, Markku (2017)

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