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Anzeige der Dokumente 31-40 von 58

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Programming pulse width assessment for reliable and low-energy endurance performance in Al:HfO2-Based RRAM arrays

Pérez, Eduardo; González Ossorio, Óscar

; Dueñas Carazo, Salvador

; Castán Lanaspa, María Helena

; García García, Héctor

; Wenger, Christian (2020)

Control of the set and reset voltage polarity in anti-series and anti-parallel resistive switching structures

García García, Héctor

; Domínguez, Luis Antonio; Castán Lanaspa, María Helena

; Dueñas Carazo, Salvador

(2019)

Dynamics of set and reset processes on resistive switching memories

Dueñas Carazo, Salvador

; Castán Lanaspa, María Helena

; González Ossorio, Óscar

; García García, Héctor

(2019)

Electrical and magnetic properties of atomic layer deposited cobalt oxide and zirconium oxide nanolaminates

Kalam, Kristjan; Seemen, Helina; Mikkor, Mats; Jõgiaas, Taivo; Ritslaid, Peeter; Tamm, Aile; Kukli, Kaupo; Kasikov, Aarne; Link, Joosep; Stern, Raivo; Dueñas Carazo, Salvador

; Castán Lanaspa, María Helena

(2019)

Controlling the intermediate conductance states in RRAM devices for synaptic applications

García García, Héctor

; González Ossorio, Óscar

; Dueñas Carazo, Salvador

; Castán Lanaspa, María Helena

(2019)

Effective reduction of the programing pulse width in Al: HfO2-based RRAM arrays

González Ossorio, Óscar

; Pérez, Eduardo; Dueñas Carazo, Salvador

; Castán Lanaspa, María Helena

; García García, Héctor

; Wenger, Christian (2019)

Memory maps : Reading RRAM devices without power consumption

Dueñas Carazo, Salvador

; Castán Lanaspa, María Helena

; Kukli, Kaupo; Mikkor, Mats; Kalam, Kristjan; Arroval, T.; Tamm, Aile (2018)

Resistive switching properties of atomic layer deposited ZrO2-HfO2 thin films

González Ossorio, Óscar

; Dueñas Carazo, Salvador

; Castán Lanaspa, María Helena

; Tamm, Aile; Kalam, Kristjan; Seemen, Helina; Kukli, Kaupo (2018)

Study of the influence of the dielectric composition of Al/Ti/ZrO2 : Al2O3/TiN/Si/Al structures on the resistive switching behavior for memory applications

Castán Lanaspa, María Helena

; Dueñas Carazo, Salvador

; Kukli, Kaupo; Kemell, Marianna; Ritala, Mikko; Leskelä, Markku (2018)

The role of defects in the resistive switching behavior of Ta2O5-TiO2-based metal–insulator–metal (MIM) devices for memory applications

Dueñas Carazo, Salvador

; Castán Lanaspa, María Helena

; García García, Héctor

; González Ossorio, Óscar

; Domínguez, Leidy Azucena; Seemen, Helina; Tamm, Aile; Kukli, Kaupo; Aarik, Jaan (2018)

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