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Now showing items 11-20 of 63

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Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor discharge

García García, Héctor

; Jiménez Molinos, Francisco; Vinuesa Sanz, Guillermo

; Bargalló González, Mireia; Roldán, Juan B.; Miranda, Enrique; Campabadal Segura, Francesca; Castán Lanaspa, María Helena

; Dueñas Carazo, Salvador

(2022)

Empirical Characterization of ReRAM Devices Using Memory Maps and a Dynamic Route Map

Picos, Rodrigo; Stavrinides, Stavros G.; Al Chawa, Mohamad Moner; de Benito, Carola; Dueñas Carazo, Salvador

; Castán Lanaspa, María Helena

; Hatzikraniotis, Euripides; Chua, Leon O. (2022)

Structure and electrical behavior of hafnium-praseodymium oxide thin films grown by atomic layer deposition

Kukli, Kaupo; Aarik, Lauri; Vinuesa Sanz, Guillermo

; Dueñas Carazo, Salvador

; Castán Lanaspa, María Helena

; García García, Héctor

; Kasikov, Aarne; Ritslaid, Peeter; Piirsoo, Helle-Mai; Aarik, Jaan (2022)

An experimental and simulation study of the role of thermal effects on variability in TiN/Ti/HfO2/W resistive switching nonlinear devices

Maldonado, D.; Aguilera-Pedregosa, C.; Vinuesa Sanz, Guillermo

; García García, Héctor

; Dueñas Carazo, Salvador

; Castán Lanaspa, María Helena

; Aldana, S.; González, M.B.; Moreno, E.; Jiménez-Molinos, F.; Campabadal Segura, Francesca; Roldán, J.B. (2022)

Performance assessment of amorphous HfO2-based RRAM devices for neuromorphic applications

González Ossorio, Óscar

; Vinuesa Sanz, Guillermo

; García García, Héctor

; Sahelices Fernández, Benjamín

; Dueñas Carazo, Salvador

; Castán Lanaspa, María Helena

; Pérez, Eduardo; Kalishettyhalli Mahadevaiah, Mamathamba; Wenger, Christian (2021)

Performance Assessment of Amorphous HfO2-Based RRAM Devices for Neuromorphic Applications

González Ossorio, Óscar

; Vinuesa Sanz, Guillermo

; García García, Héctor

; Sahelices Fernández, Benjamín

; Dueñas Carazo, Salvador

; Castán Lanaspa, María Helena

; Pérez, Eduardo; Kalishettyhalli Mahadevaiah, Mamathamba; Wenger, Christian (2021)

Thermoelectrical characterization of piezoelectric diaphragms: Towards a better understanding of ferroelectrics for future memory applications

Vinuesa Sanz, Guillermo

; Marín, Pelayo; González Ossorio, Óscar

; Sahelices Fernández, Benjamín

; García García, Héctor

; Castán Lanaspa, María Helena

; Dueñas Carazo, Salvador

(2021)

Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge

García García, Héctor

; Vinuesa Sanz, Guillermo

; González Ossorio, Óscar

; Sahelices Fernández, Benjamín

; Castán Lanaspa, María Helena

; Dueñas Carazo, Salvador

; Bargalló González, Mireia; Campabadal Segura, Francesca (2021)

Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications

González Ossorio, Óscar

; Vinuesa Sanz, Guillermo

; García García, Héctor

; Sahelices Fernández, Benjamín

; Dueñas Carazo, Salvador

; Castán Lanaspa, María Helena

; Ritala, Mikko; Leskelä, Markku; Kemell, Marianna; Kukli, Kaupo (2021)

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