Sfoglia GCME - Artículos de revista per Data di Pubblicazione "2021"

Items 1-11 di 11

Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications

González Ossorio, Óscar ; Vinuesa Sanz, Guillermo ; García García, Héctor ; Sahelices Fernández, Benjamín ; Dueñas Carazo, Salvador ; Castán Lanaspa, María Helena ; Ritala, Mikko; Leskelä, Markku; Kemell, Marianna; Kukli, Kaupo (2021)
Atomic layer deposited nanolaminates of zirconium oxide and manganese oxide from manganese(III)acetylacetonate and ozone

Kalam, Kristjan; Rammula, Raul; Ritslaid, Peeter; Käämbre, Tanel; Link, Joosep; Stern, Raivo; Vinuesa Sanz, Guillermo ; Dueñas Carazo, Salvador ; Castán Lanaspa, María Helena ; Tamm, Aile; Kukli, Kaupo (2021)
Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices

Vinuesa Sanz, Guillermo ; González Ossorio, Óscar ; García García, Héctor ; Sahelices Fernández, Benjamín ; Castán Lanaspa, María Helena ; Dueñas Carazo, Salvador ; Kukli, Kaupo; Kull, M; Tarre, Aivar; Jõgiaas, Taivo; Tamm, Aile; Kasikov, Aarne (2021)
Hafnium oxide/graphene/hafnium oxide-stacked nanostructures as resistive switching media

Kahro, Tauno; Tarre, Aivar; Käämbre, Tanel; Piirsoo, Helle-Mai; Kozlova, Jekaterina; Ritslaid, Peeter; Kasikov, Aarne; Jõgiaas, Taivo; Vinuesa Sanz, Guillermo ; Dueñas Carazo, Salvador ; Castán Lanaspa, María Helena ; Tamm, Aile; Kukli, Kaupo (2021)
Influences of the temperature on the electrical properties of HfO2-based resistive switching devices

García García, Héctor ; Boo Alvarez, Jonathan; Vinuesa Sanz, Guillermo ; González Ossorio, Óscar ; Sahelices Fernández, Benjamín ; Dueñas Carazo, Salvador ; Castán Lanaspa, María Helena ; Bargalló González, Mireia; Campabadal Segura, Francesca (2021)
Off-chip prefetching based on Hidden Markov Model for non-volatile memory architectures

Lamela, Adrián; González Ossorio, Óscar ; Vinuesa Sanz, Guillermo ; Sahelices Fernández, Benjamín (2021)
Performance assessment of amorphous HfO2-based RRAM devices for neuromorphic applications

González Ossorio, Óscar ; Vinuesa Sanz, Guillermo ; García García, Héctor ; Sahelices Fernández, Benjamín ; Dueñas Carazo, Salvador ; Castán Lanaspa, María Helena ; Pérez, Eduardo; Kalishettyhalli Mahadevaiah, Mamathamba; Wenger, Christian (2021)
Performance Assessment of Amorphous HfO2-Based RRAM Devices for Neuromorphic Applications

González Ossorio, Óscar ; Vinuesa Sanz, Guillermo ; García García, Héctor ; Sahelices Fernández, Benjamín ; Dueñas Carazo, Salvador ; Castán Lanaspa, María Helena ; Pérez, Eduardo; Kalishettyhalli Mahadevaiah, Mamathamba; Wenger, Christian (2021)
Standards for the Characterization of Endurance in Resistive Switching Devices

Lanza, Mario; Waser, Rainer; Ielmini, Daniele; Yang, J. Joshua; Goux, Ludovic; Suñe, Jordi; Kenyon, Anthony Joseph; Mehonic, Adnan; Spiga, Sabina; Rana, Vikas; Wiefels, Stefan; Menzel, Stephan; Valov, Ilia; Villena, Marco A.; Miranda, Enrique; Jing, Xu; Campabadal, Francesca; Gonzalez, Mireia B.; Aguirre, Fernando; Palumbo, Felix; Zhu, Kaichen; Roldan, Juan Bautista; Puglisi, Francesco Maria; Larcher, Luca; Hou, Tuo-Hung; Prodromakis, Themis; Yang, Yuchao; Huang, Peng; Wan, Tianqing; Chai, Yang; Pey, Kin Leong; Raghavan, Nagarajan; Dueñas Carazo, Salvador ; Wang, Tao; Xia, Qiangfei; Pazos, Sebastian (2021)
Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge

García García, Héctor ; Vinuesa Sanz, Guillermo ; González Ossorio, Óscar ; Sahelices Fernández, Benjamín ; Castán Lanaspa, María Helena ; Dueñas Carazo, Salvador ; Bargalló González, Mireia; Campabadal Segura, Francesca (2021)
Thermoelectrical characterization of piezoelectric diaphragms: Towards a better understanding of ferroelectrics for future memory applications

Vinuesa Sanz, Guillermo ; Marín, Pelayo; González Ossorio, Óscar ; Sahelices Fernández, Benjamín ; García García, Héctor ; Castán Lanaspa, María Helena ; Dueñas Carazo, Salvador (2021)

Sfoglia GCME - Artículos de revista per Data di Pubblicazione "2021"

Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications ﻿

Atomic layer deposited nanolaminates of zirconium oxide and manganese oxide from manganese(III)acetylacetonate and ozone ﻿

Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices ﻿

Hafnium oxide/graphene/hafnium oxide-stacked nanostructures as resistive switching media ﻿

Influences of the temperature on the electrical properties of HfO2-based resistive switching devices ﻿

Off-chip prefetching based on Hidden Markov Model for non-volatile memory architectures ﻿

Performance assessment of amorphous HfO2-based RRAM devices for neuromorphic applications ﻿

Performance Assessment of Amorphous HfO2-Based RRAM Devices for Neuromorphic Applications ﻿

Standards for the Characterization of Endurance in Resistive Switching Devices ﻿

Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge ﻿

Thermoelectrical characterization of piezoelectric diaphragms: Towards a better understanding of ferroelectrics for future memory applications ﻿

Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications

Atomic layer deposited nanolaminates of zirconium oxide and manganese oxide from manganese(III)acetylacetonate and ozone

Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices

Hafnium oxide/graphene/hafnium oxide-stacked nanostructures as resistive switching media

Influences of the temperature on the electrical properties of HfO2-based resistive switching devices

Off-chip prefetching based on Hidden Markov Model for non-volatile memory architectures

Performance assessment of amorphous HfO2-based RRAM devices for neuromorphic applications

Performance Assessment of Amorphous HfO2-Based RRAM Devices for Neuromorphic Applications

Standards for the Characterization of Endurance in Resistive Switching Devices

Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge

Thermoelectrical characterization of piezoelectric diaphragms: Towards a better understanding of ferroelectrics for future memory applications