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Título
Electrical characterization of defects created by γ-radiation in HfO2-based MIS structures for RRAM applications
Autor
Año del Documento
2018
Editorial
Springer Link
Descripción
Producción Científica
Documento Fuente
Journal of Electronic Materials, 2018, vol. 47. p. 5013-5018
Abstract
The γ-radiation effects on the electrical characteristics of metal–insulator-semiconductor capacitors based on HfO2, and on the resistive switching characteristics of the structures have been studied. The HfO2 was grown directly on silicon substrates by atomic layer deposition. Some of the capacitors were submitted to a γ ray irradiation using three different doses (16 kGy, 96 kGy and 386 kGy). We studied the electrical characteristics in the pristine state of the capacitors. The radiation increased the interfacial state densities at the insulator/semiconductor interface, and the slow traps inside the insulator near the interface. However, the leakage current is not increased by the irradiation, and the conduction mechanism is Poole–Frenkel for all the samples. The switching characteristics were also studied, and no significant differences were obtained in the performance of the devices after having been irradiated, indicating that the fabricated capacitors present good radiation hardness for its use as a RS element.
Palabras Clave
Hafnium oxide
Óxido de hafnio
Resistive memories
Memorias resistivas
ISSN
0361-5235
Revisión por pares
SI
Patrocinador
Ministerio de Economía, Ciencia y Competitividad - Fondo Europeo de Desarrollo Regional (projects TEC2014- 52512-C3-3-R, TEC2014-52512-C3-1-R and TEC2014-54906-JIN)
Version del Editor
Propietario de los Derechos
© 2018 Springer
Idioma
eng
Tipo de versión
info:eu-repo/semantics/acceptedVersion
Derechos
openAccess
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