Since two decades ago, research on resistive memories has continuosly grown, gathering relevance through the variety of different
technologies that fit into the non-volatile memories’ area. In this study, we discuss the performance and electrical characteristics
of RRAM cells constituted by MIM stacks with dielectric formed by Nb2O5-doped SiO2. We report experimental results that show
a clear improvement in the resistive behavior of the devices and an excellent analogical control of the intermediate levels between
high-resistance and low-resistance states.
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