Auflistung Dpto. Electricidad y Electrónica nach Autor "Aboy Cebrián, María"

{001} loops in silicon unraveled

Marqués Cuesta, Luis Alberto

; Aboy Cebrián, María

; Ruiz Prieto, Manuel; Santos Tejido, Iván

; López Martín, Pedro

; Pelaz Montes, María Lourdes

(2019)

A detailed approach for the classification and statistical analysis of irradiation induced defects

López Martín, Pedro

; Santos Tejido, Iván

; Aboy Cebrián, María

; Marqués Cuesta, Luis Alberto

; Pelaz Montes, María Lourdes

(2015)

Atomistic analysis of B clustering and mobility degradation in highly B-doped junctions

Aboy Cebrián, María

; Pelaz Montes, María Lourdes

; López Martín, Pedro

; Bruno, Elena; Mirabella, Salvo (2010)

Atomistic modeling of ion implantation technologies in silicon

Marqués Cuesta, Luis Alberto

; Santos Tejido, Iván

; Pelaz Montes, María Lourdes

; López Martín, Pedro

; Aboy Cebrián, María

(2015)

Atomistic modeling of laser-related phenomena

Marqués Cuesta, Luis Alberto

; Aboy Cebrián, María

; López Martín, Pedro

; Santos Tejido, Iván

; Pelaz Montes, María Lourdes

; Fisicaro, Giuseppe (2021)

Atomistic simulations of acceptor removal in p-type Si irradiated with neutrons

López Martín, Pedro

; Aboy Cebrián, María

; Muñoz Velasco, Irene; Santos Tejido, Iván

; Marqués Cuesta, Luis Alberto

; Fernández Martínez, Pablo; Ullán, Miguel; Pelaz Montes, María Lourdes

(2022)

Atomistic study of the anisotropic interaction between extended and point defects in crystalline silicon and its influence on Si self-interstitial diffusion

Santos Tejido, Iván

; Aboy Cebrián, María

; Marqués Cuesta, Luis Alberto

; López Martín, Pedro

; Ruiz Prieto, Manuel; Pelaz Montes, María Lourdes

; Hernández Díaz, A.M.; Castrillo, P. (2016)

Characterization of amorphous Si generated through classical molecular dynamics simulations

Santos Tejido, Iván

; López Martín, Pedro

; Aboy Cebrián, María

; Marqués Cuesta, Luis Alberto

; Pelaz Montes, María Lourdes

(2017)

Evaluation of energy barriers for topological transitions of Si self-interstitial clusters by classical molecular dynamics and the kinetic activation-relaxation technique

López Martín, Pedro

; Santos Tejido, Iván

; Aboy Cebrián, María

; Marqués Cuesta, Luis Alberto

; Trochet, M.; Mousseau, N.; Pelaz Montes, María Lourdes

(2017)

Extending defect models for Si processing: The role of energy barriers for defect transformation, entropy and coalescence mechanism

Santos Tejido, Iván

; Caballo Zulueta, Ana; Aboy Cebrián, María

; Marqués Cuesta, Luis Alberto

; López Martín, Pedro

; Pelaz Montes, María Lourdes

(2022)

First principles characterization of PnVm clusters in crystalline silicon

Santos Tejido, Iván

; Aboy Cebrián, María

; López Martín, Pedro

; Marqués Cuesta, Luis Alberto

; Martín Encinar, Luis

; Pelaz Montes, María Lourdes

(2023)

Generation of amorphous Si structurally compatible with experimental samples through the quenching process: A systematic molecular dynamics simulation study

Santos Tejido, Iván

; Aboy Cebrián, María

; Marqués Cuesta, Luis Alberto

; López Martín, Pedro

; Pelaz Montes, María Lourdes

(2018)

Identification of Extended Defect Atomic Configurations in Silicon Through Transmission Electron Microscopy Image Simulation

Santos Tejido, Iván

; Ruiz Prieto, Manuel; Aboy Cebrián, María

; Marqués Cuesta, Luis Alberto

; López Martín, Pedro

; Pelaz Montes, María Lourdes

(2018)

Improved physical models for advanced silicon device processing

Pelaz Montes, María Lourdes

; Marqués Cuesta, Luis Alberto

; Aboy Cebrián, María

; López Martín, Pedro

; Santos Tejido, Iván

(2017)

Insights on the atomistic origin of X and W photoluminescence lines in c-Si from ab initio simulations

Santos Tejido, Iván

; Aboy Cebrián, María

; López Martín, Pedro

; Marqués Cuesta, Luis Alberto

; Pelaz Montes, María Lourdes

(2016)

IONDegradation in Si Devices in Harsh Radiation Environments: Modeling of Damage-Dopant Interactions

López Martín, Pedro

; Aboy Cebrián, María

; Muñoz, I.; Santos Tejido, Iván

; Marqués Cuesta, Luis Alberto

; Couso, Carlos; Ullán, Miguel; Pelaz Montes, María Lourdes

(2019)

Kinetic Monte Carlo simulations of boron activation in implanted Si under laser thermal annealing

Fisicaro, Giuseppe; Pelaz Montes, María Lourdes

; Aboy Cebrián, María

; López Martín, Pedro

; Italia, Markus; Huet, Karim; Cristiano, Filadelfo; Essa, Zahi; Yang, Qui; Bedel Pereira, Elena; Quillec, Maurice; La Magna, Antonino (2014)

Kinetics of large B clusters in crystalline and preamorphized silicon

Aboy Cebrián, María

; Pelaz Montes, María Lourdes

; Bruno, Elena; Mirabella, Salvo; Boninelli, Simona (2011)

Microscopic origin of the acceptor removal in neutron-irradiated Si detectors - An atomistic simulation study

López Martín, Pedro

; Aboy Cebrián, María

; Santos Tejido, Iván

; Marqués Cuesta, Luis Alberto

; Ullán, Miguel; Pelaz Montes, María Lourdes

(2022)

Modeling and experimental characterization of stepped and v-shaped {311} defects in silicon

Marqués Cuesta, Luis Alberto

; Aboy Cebrián, María

; Dudeck, Karleen J.; Botton, Gianluigi A.; Knights, Andrew P.; Gwilliam, Russell M. (2014)

Auflistung Dpto. Electricidad y Electrónica nach Autor "Aboy Cebrián, María"

{001} loops in silicon unraveled ﻿

A detailed approach for the classification and statistical analysis of irradiation induced defects ﻿

Atomistic analysis of B clustering and mobility degradation in highly B-doped junctions ﻿

Atomistic modeling of ion implantation technologies in silicon ﻿

Atomistic modeling of laser-related phenomena ﻿

Atomistic simulations of acceptor removal in p-type Si irradiated with neutrons ﻿

Atomistic study of the anisotropic interaction between extended and point defects in crystalline silicon and its influence on Si self-interstitial diffusion ﻿

Characterization of amorphous Si generated through classical molecular dynamics simulations ﻿

Evaluation of energy barriers for topological transitions of Si self-interstitial clusters by classical molecular dynamics and the kinetic activation-relaxation technique ﻿

Extending defect models for Si processing: The role of energy barriers for defect transformation, entropy and coalescence mechanism ﻿

First principles characterization of PnVm clusters in crystalline silicon ﻿

Generation of amorphous Si structurally compatible with experimental samples through the quenching process: A systematic molecular dynamics simulation study ﻿

Identification of Extended Defect Atomic Configurations in Silicon Through Transmission Electron Microscopy Image Simulation ﻿

Improved physical models for advanced silicon device processing ﻿

Insights on the atomistic origin of X and W photoluminescence lines in c-Si from ab initio simulations ﻿

IONDegradation in Si Devices in Harsh Radiation Environments: Modeling of Damage-Dopant Interactions ﻿

Kinetic Monte Carlo simulations of boron activation in implanted Si under laser thermal annealing ﻿

Kinetics of large B clusters in crystalline and preamorphized silicon ﻿

Microscopic origin of the acceptor removal in neutron-irradiated Si detectors - An atomistic simulation study ﻿

Modeling and experimental characterization of stepped and v-shaped {311} defects in silicon ﻿

{001} loops in silicon unraveled

A detailed approach for the classification and statistical analysis of irradiation induced defects

Atomistic analysis of B clustering and mobility degradation in highly B-doped junctions

Atomistic modeling of ion implantation technologies in silicon

Atomistic modeling of laser-related phenomena

Atomistic simulations of acceptor removal in p-type Si irradiated with neutrons

Atomistic study of the anisotropic interaction between extended and point defects in crystalline silicon and its influence on Si self-interstitial diffusion

Characterization of amorphous Si generated through classical molecular dynamics simulations

Evaluation of energy barriers for topological transitions of Si self-interstitial clusters by classical molecular dynamics and the kinetic activation-relaxation technique

Extending defect models for Si processing: The role of energy barriers for defect transformation, entropy and coalescence mechanism

First principles characterization of PnVm clusters in crystalline silicon

Generation of amorphous Si structurally compatible with experimental samples through the quenching process: A systematic molecular dynamics simulation study

Identification of Extended Defect Atomic Configurations in Silicon Through Transmission Electron Microscopy Image Simulation

Improved physical models for advanced silicon device processing

Insights on the atomistic origin of X and W photoluminescence lines in c-Si from ab initio simulations

IONDegradation in Si Devices in Harsh Radiation Environments: Modeling of Damage-Dopant Interactions

Kinetic Monte Carlo simulations of boron activation in implanted Si under laser thermal annealing

Kinetics of large B clusters in crystalline and preamorphized silicon

Microscopic origin of the acceptor removal in neutron-irradiated Si detectors - An atomistic simulation study

Modeling and experimental characterization of stepped and v-shaped {311} defects in silicon