Auflistung Electrónica - Artículos de revista nach Autor "Aboy Cebrián, María"

{001} loops in silicon unraveled

Marqués Cuesta, Luis Alberto

; Aboy Cebrián, María

; Ruiz Prieto, Manuel; Santos Tejido, Iván

; López Martín, Pedro

; Pelaz Montes, María Lourdes

(2019)

A detailed approach for the classification and statistical analysis of irradiation induced defects

López Martín, Pedro

; Santos Tejido, Iván

; Aboy Cebrián, María

; Marqués Cuesta, Luis Alberto

; Pelaz Montes, María Lourdes

(2015)

Atomistic analysis of B clustering and mobility degradation in highly B-doped junctions

Aboy Cebrián, María

; Pelaz Montes, María Lourdes

; López Martín, Pedro

; Bruno, Elena; Mirabella, Salvo (2010)

Atomistic modeling of ion implantation technologies in silicon

Marqués Cuesta, Luis Alberto

; Santos Tejido, Iván

; Pelaz Montes, María Lourdes

; López Martín, Pedro

; Aboy Cebrián, María

(2015)

Atomistic simulations of acceptor removal in p-type Si irradiated with neutrons

López Martín, Pedro

; Aboy Cebrián, María

; Muñoz Velasco, Irene; Santos Tejido, Iván

; Marqués Cuesta, Luis Alberto

; Fernández Martínez, Pablo; Ullán, Miguel; Pelaz Montes, María Lourdes

(2022)

Extending defect models for Si processing: The role of energy barriers for defect transformation, entropy and coalescence mechanism

Santos Tejido, Iván

; Caballo Zulueta, Ana; Aboy Cebrián, María

; Marqués Cuesta, Luis Alberto

; López Martín, Pedro

; Pelaz Montes, María Lourdes

(2022)

Generation of amorphous Si structurally compatible with experimental samples through the quenching process: A systematic molecular dynamics simulation study

Santos Tejido, Iván

; Aboy Cebrián, María

; Marqués Cuesta, Luis Alberto

; López Martín, Pedro

; Pelaz Montes, María Lourdes

(2018)

Identification of Extended Defect Atomic Configurations in Silicon Through Transmission Electron Microscopy Image Simulation

Santos Tejido, Iván

; Ruiz Prieto, Manuel; Aboy Cebrián, María

; Marqués Cuesta, Luis Alberto

; López Martín, Pedro

; Pelaz Montes, María Lourdes

(2018)

Improved physical models for advanced silicon device processing

Pelaz Montes, María Lourdes

; Marqués Cuesta, Luis Alberto

; Aboy Cebrián, María

; López Martín, Pedro

; Santos Tejido, Iván

(2017)

Insights on the atomistic origin of X and W photoluminescence lines in c-Si from ab initio simulations

Santos Tejido, Iván

; Aboy Cebrián, María

; López Martín, Pedro

; Marqués Cuesta, Luis Alberto

; Pelaz Montes, María Lourdes

(2016)

Kinetic Monte Carlo simulations of boron activation in implanted Si under laser thermal annealing

Fisicaro, Giuseppe; Pelaz Montes, María Lourdes

; Aboy Cebrián, María

; López Martín, Pedro

; Italia, Markus; Huet, Karim; Cristiano, Filadelfo; Essa, Zahi; Yang, Qui; Bedel Pereira, Elena; Quillec, Maurice; La Magna, Antonino (2014)

Kinetics of large B clusters in crystalline and preamorphized silicon

Aboy Cebrián, María

; Pelaz Montes, María Lourdes

; Bruno, Elena; Mirabella, Salvo; Boninelli, Simona (2011)

Microscopic origin of the acceptor removal in neutron-irradiated Si detectors - An atomistic simulation study

López Martín, Pedro

; Aboy Cebrián, María

; Santos Tejido, Iván

; Marqués Cuesta, Luis Alberto

; Ullán, Miguel; Pelaz Montes, María Lourdes

(2022)

Modeling and experimental characterization of stepped and v-shaped {311} defects in silicon

Marqués Cuesta, Luis Alberto

; Aboy Cebrián, María

; Dudeck, Karleen J.; Botton, Gianluigi A.; Knights, Andrew P.; Gwilliam, Russell M. (2014)

Modeling of defects, dopant diffusion and clustering in silicon

Aboy Cebrián, María

; Santos Tejido, Iván

; Pelaz Montes, María Lourdes

; Marqués Cuesta, Luis Alberto

; López Martín, Pedro

(2014)

Molecular dynamics simulation of the early stages of self-interstitial clustering in silicon

Marqués Cuesta, Luis Alberto

; Santos Tejido, Iván

; Pelaz Montes, María Lourdes

; López Martín, Pedro

; Aboy Cebrián, María

(2016)

Molecular dynamics simulations of damage production by thermal spikes in Ge

López Martín, Pedro

; Pelaz Montes, María Lourdes

; Santos Tejido, Iván

; Marqués Cuesta, Luis Alberto

; Aboy Cebrián, María

(2012)

On the anomalous generation of {0 0 1} loops during laser annealing of ion-implanted silicon

Marqués Cuesta, Luis Alberto

; Aboy Cebrián, María

; Santos Tejido, Iván

; López Martín, Pedro

; Cristiano, Fuccio; La Magna, Antonino; Huet, Karim; Tabata, Toshiyuki; Pelaz Montes, María Lourdes

(2018)

Rapid thermal process driven intra-die device variations

Tsai, Chinhao; Aboy Cebrián, María

; Pelaz Montes, María Lourdes

; Hsu, Yu-Hsiang; Woon, Wei-Yen; Timans, Paul J.; Lee, Chih-Kung (2022)

Simulation of p-n junctions: Present and future challenges for technologies beyond 32 nm

Pelaz Montes, María Lourdes

; Marqués Cuesta, Luis Alberto

; Aboy Cebrián, María

; Santos Tejido, Iván

; López Martín, Pedro

; Duffy, Ray (2010)

Auflistung Electrónica - Artículos de revista nach Autor "Aboy Cebrián, María"

{001} loops in silicon unraveled ﻿

A detailed approach for the classification and statistical analysis of irradiation induced defects ﻿

Atomistic analysis of B clustering and mobility degradation in highly B-doped junctions ﻿

Atomistic modeling of ion implantation technologies in silicon ﻿

Atomistic simulations of acceptor removal in p-type Si irradiated with neutrons ﻿

Extending defect models for Si processing: The role of energy barriers for defect transformation, entropy and coalescence mechanism ﻿

Generation of amorphous Si structurally compatible with experimental samples through the quenching process: A systematic molecular dynamics simulation study ﻿

Identification of Extended Defect Atomic Configurations in Silicon Through Transmission Electron Microscopy Image Simulation ﻿

Improved physical models for advanced silicon device processing ﻿

Insights on the atomistic origin of X and W photoluminescence lines in c-Si from ab initio simulations ﻿

Kinetic Monte Carlo simulations of boron activation in implanted Si under laser thermal annealing ﻿

Kinetics of large B clusters in crystalline and preamorphized silicon ﻿

Microscopic origin of the acceptor removal in neutron-irradiated Si detectors - An atomistic simulation study ﻿

Modeling and experimental characterization of stepped and v-shaped {311} defects in silicon ﻿

Modeling of defects, dopant diffusion and clustering in silicon ﻿

Molecular dynamics simulation of the early stages of self-interstitial clustering in silicon ﻿

Molecular dynamics simulations of damage production by thermal spikes in Ge ﻿

On the anomalous generation of {0 0 1} loops during laser annealing of ion-implanted silicon ﻿

Rapid thermal process driven intra-die device variations ﻿

Simulation of p-n junctions: Present and future challenges for technologies beyond 32 nm ﻿

{001} loops in silicon unraveled

A detailed approach for the classification and statistical analysis of irradiation induced defects

Atomistic analysis of B clustering and mobility degradation in highly B-doped junctions

Atomistic modeling of ion implantation technologies in silicon

Atomistic simulations of acceptor removal in p-type Si irradiated with neutrons

Extending defect models for Si processing: The role of energy barriers for defect transformation, entropy and coalescence mechanism

Generation of amorphous Si structurally compatible with experimental samples through the quenching process: A systematic molecular dynamics simulation study

Identification of Extended Defect Atomic Configurations in Silicon Through Transmission Electron Microscopy Image Simulation

Improved physical models for advanced silicon device processing

Insights on the atomistic origin of X and W photoluminescence lines in c-Si from ab initio simulations

Kinetic Monte Carlo simulations of boron activation in implanted Si under laser thermal annealing

Kinetics of large B clusters in crystalline and preamorphized silicon

Microscopic origin of the acceptor removal in neutron-irradiated Si detectors - An atomistic simulation study

Modeling and experimental characterization of stepped and v-shaped {311} defects in silicon

Modeling of defects, dopant diffusion and clustering in silicon

Molecular dynamics simulation of the early stages of self-interstitial clustering in silicon

Molecular dynamics simulations of damage production by thermal spikes in Ge

On the anomalous generation of {0 0 1} loops during laser annealing of ion-implanted silicon

Rapid thermal process driven intra-die device variations

Simulation of p-n junctions: Present and future challenges for technologies beyond 32 nm